SVF6N70N Description
SVF6N70MJG/D/K/N is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power...
SVF6N70N Key Features
- 6A,700V,RDS(on(typ.)=1.35@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability