∗ 7A,650V,RDS(on)(typ)=1.1 Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE Silan VDMOS Code of F-Cell process Nominal c.

SVF7N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tai.

SVF7N65CF

SVF7N65CFJ

SVF7N65D

SVF7N65FQ

SVF7N65K

SVF7N65MJ

SVF7N65RDTR

SVF7N65RF

SVF7N65RFJH

SVF7N65RMJ

SVF7N65RT

SVF7N65S

SVF7N65T