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SVG104R5NT - 100V N-CHANNEL MOSFET

Description

SVG104R5NT(S)(F)(KL)(S6) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

Features

  • 2 1 3 1.Gate 2.Drain 3.Source 123 TO-262L-3L 123 TO-220F-3L.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability 123 TO-220-3L 1 3 TO-263-2L TO-263-6L.

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Datasheet Details

Part number SVG104R5NT
Manufacturer Silan Microelectronics
File Size 396.53 KB
Description 100V N-CHANNEL MOSFET
Datasheet download datasheet SVG104R5NT Datasheet

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Silan Microelectronics SVG104R5NT(S)(F)(KL)(S6)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S)(F)(KL)(S6) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in UPS, Power Management for Inverter Systems. FEATURES 2 1 3 1.Gate 2.Drain 3.Source 123 TO-262L-3L 123 TO-220F-3L  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 123 TO-220-3L 1 3 TO-263-2L TO-263-6L ORDERING INFORMATION Part No.
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