SVG104R5NF Datasheet | Silan Microelectronics

Silan Microelectronics SVG104R5NT(S)(F)(KL)(S6)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S)(F)(KL)(S6) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in UPS, Power Management for Inverter Systems. Features 1 3 1.Gate 2.Drain 3.Source TO-262L-3L TO-220F-3L - Low gate charge - Low Crss - Fast switching - Improved dv/dt capability 123 TO-220-3L 1 3 TO-263-2L TO-263-6L ORDERING INFORMATION Part No. SVG104R5NT SVG104R5NS SVG104R5NSTR SVG104R5NF SVG104R5NKL SVG104R5NS6 SVG104R5NS6TR Package TO-220-3L TO-263-2L TO-263-2L TO-220F-3L TO-262L-3L TO-263-6L TO-263-6L Marking 104R5NT 104R5NS 104R5NS 104R5NF 104R5NKL 104R5NS6 104R5NS6 Hazardous Substance Control Pb free Halogen free Halogen free Pb free Pb free Halogen free Halogen free Packing Type Tube Tube Tape&Reel Tube Tube Tube Tape&Reel HANGZHOU SILAN MICROELECTRONICS CO.,LTD http:...