SVG104R5NS6 Description
SVG104R5NT(S)(F)(KL)(S6) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in UPS, Power Management for Inverter Systems.
SVG104R5NS6 Key Features
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability