| Title | |
| Description | SVGQ046R8NLPD is dual N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in power management for UPS and Inverter Systems. S2 1 G2... |
| Features |
AEC-Q101 qualified 63A, 40V, RDS(on)(typ.)=5.6m@VGS=10V Low gate charge Low Crss Fast switching Extreme dv/dt rated 100% avalanche tested Pb-free lead plating RoHS compliant Max. junction temperature: Tjmax.=175 ºC
KEY PERFORMANCE PARAMETERS
Characteristics VDS
VGS(th) RDS(on),max
ID Qg.typ
Ratings 40
2.4~3.4 6.8 63 18
Unit...
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| Datasheet |
 SVGQ046R8NLPD Datasheet - 436.25KB |
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