40V Datasheet | Specifications & PDF Download

Datasheet 2A 150KHz 40V Buck DC to DC Converter XL1509 Features  Wide 4.5V to 40V Input Voltage Range  3.3V,5V,12V, and adjustable versions  Out

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OC5820 MOSFET 。OC5820 6-40V 2.5 A ， 。 OC5820 PWM ， 。 OC5820 FS ， 。 OC5820 。 OC5820 ESOP8 ， 。 OC5820 2.5A，40V  2.5A  40V/3A MOSFET  93

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Datasheet 12A 180KHz 40V Buck DC to DC Converter XL4016 Features  Recommended operating voltage range 8V~36V  Output Adjustable from 1.25V to 32V

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40V,60A N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SFD4006T uses advanced trench technology and design to provide excellent RDS(on) with low gate

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UMW AO4480 40V N-ChanneI MOSFET 1.Description The AO4480 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD Pro

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-40A, -40V P-CHANNELMOSFET GENERAL DESCRIPTION The SFD4004PT uses advanced trench technology and design to provide excellent RDS(ON) with low gate cha

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UMW AO4614 40V P-Channel and N-Channel MOSFET 1.Description The AO4614 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low g

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40V, 8A Dual N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SFS4008T2 uses advanced trench technology and design to provide excellent RDS(on) with

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FB3004G-VB PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V ID (A) Configuration Qg (nC) TO-220AB FB3004G-VB Datasheet N-Channel 40-V (D-S) MOSFET

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40V, 30A N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SFX4003T uses advanced trench technology and design to provide excellent RDS(on) with low gate

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MOSFET – P-Channel POWERTRENCH) -40 V, 7.5 mW, -90 A FDD9509L-F085 Features • Typ rDS(on) = 6.0 mW at VGS = −10 V; ID = −70 A • Typ Qg(tot) = 50 nC

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S8MND013 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technolog

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VS4620DE-G 40V/14A Dual N-Channel Advanced Power MOSFET Features V DS R @ DS(on),TYP VGS=10V 40 V 9 mΩ  Dual N-Channel R @ DS(on),TYP VGS=4.5V

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BP0405SCG 40V Complementary MOSFET Description The BP0405SCG uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The co

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LB3034-VB PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V ID (A) Configuration Qg (nC) TO-220AB LB3034-VB Datasheet N-Channel 40-V (D-S) MOSFET 40

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UMW SI2319A -40V P-ChanneI MOSFET 1.Features VDS(V)=-40V RDS(ON)<70mΩ(VGS=10V), ID=-4.4A RDS(ON)<95mΩ(VGS=4.5V), ID=-3.5A 3.Pinning information Pin

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W241-VB W241-VB Datasheet Dual N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.022 at VGS = 10 V 30 0.026 at VG

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SPTD04R014E 40V N-Channel MOSFET General Features ➢ Proprietary New Trench Technology ➢ RDS(ON),typ.=1.7mΩ@VGS=10V ➢ Fast switching capability ➢ Very

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S-LN7405HDT3WG 40V N-Channel MOSFET 8 7 6 5 1. FEATURES ● Low thermal impedance. ● Exceptional on-resistance and maximum DC current capability ● We

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www.atcsemi.com Features ● Advanced high cell density Trench technology ● Super Low Gate Charge ● Excellent CdV/dt effect decline ● Green Device Avail

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