SVGQ041R3NL5V-2HS Datasheet (Silan Microelectronics)

SVGQ041R3NL5V-2HS, 40V N-CHANNEL MOSFET

SVGQ041R3NL5V-2HS is an N-channel enhancement mode power S1 8D MOS field effect transistor which is produced using Silan's LVMOS S2 7D technology.

The improved process and cell structure have been S3 6D especially tailored to minimize on-state resistance, provide superior G4 5D switchin

SVGQ041R3NL5V-2HS Features

* Qualification in accordance with AEC-Q101

* 190A, 40V, RDS(on)(typ.)=1.1m@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Extreme dv/dt rated

* 100% avalanche tested

* Pb-free lead plating

* RoHS compliant

* Wettable flanks

* Max. junction temp