SVGQ041R3NL5V-2HS - 40V N-CHANNEL MOSFET

Silan Microelectronics

SVGQ041R3NL5V-2HS Datasheet Preview — Preview of SVGQ041R3NL5V-2HS PDF

Datasheet Details

Part number	SVGQ041R3NL5V-2HS
Manufacturer	Silan Microelectronics
File Size	436.63 KB
Description	40V N-CHANNEL MOSFET
Datasheet	SVGQ041R3NL5V-2HS-SilanMicroelectronics.pdf

SVGQ041R3NL5V-2HS Product details

Description

SVGQ041R3NL5V-2HS is an N-channel enhancement mode power S1 8D MOS field effect transistor which is produced using Silan's LVMOS S2 7D technology.The improved process and cell structure have been S3 6D especially tailored to minimize on-state resistance, provide superior G4 5D switching performance and high avalanche breakdown tolerance.This device is widely used in 12V motor control system, Start-stop micro-hybrid and so on.

Features

Qualification in accordance with AEC-Q101.
190A, 40V, RDS(on)(typ. )=1.1m@VGS=10V.
Low gate charge.
Low Crss.
Fast switching.
Extreme dv/dt rated.
100% avalanche tested.
Pb-free lead plating.
RoHS compliant.
Wettable flanks.
Max. junction temperature: Tjmax. =175 ºC KEY.

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Published: Mar 17, 2025 |