SVGQ041R0NL5V-2HS Datasheet (Silan Microelectronics)

SVGQ041R0NL5V-2HS, 40V N-CHANNEL MOSFET

S1 8D SVGQ041R0NL5V-2HS is an N-channel enhancement mode power S2 7D MOS field effect transistor which is produced using Silan's LVMOS S3 6D technology.

The improved process and cell structure have been G4 5D especially tailored to minimize on-state resistance, provide superior switchin

SVGQ041R0NL5V-2HS Features

* 230A, 40V, RDS(on)(typ.)=0.7m@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Extreme dv/dt rated

* 100% avalanche tested

* Pb-free lead plating

* RoHS compliant PDFN-8Q-5X6X1.1-1.27 KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max ID Q