SVGQ041R0NL5V-2HS - 40V N-CHANNEL MOSFET

Silan Microelectronics

SVGQ041R0NL5V-2HS Datasheet Preview — Preview of SVGQ041R0NL5V-2HS PDF

Datasheet Details

Part number	SVGQ041R0NL5V-2HS
Manufacturer	Silan Microelectronics
File Size	476.98 KB
Description	40V N-CHANNEL MOSFET
Datasheet	SVGQ041R0NL5V-2HS-SilanMicroelectronics.pdf

SVGQ041R0NL5V-2HS Product details

Description

S1 8D SVGQ041R0NL5V-2HS is an N-channel enhancement mode power S2 7D MOS field effect transistor which is produced using Silan's LVMOS S3 6D technology.The improved process and cell structure have been G4 5D especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance.This device is widely used in power management for UPS and Inverter Systems.

Features

230A, 40V, RDS(on)(typ. )=0.7m@VGS=10V.
Low gate charge.
Low Crss.
Fast switching.
Extreme dv/dt rated.
100% avalanche tested.
Pb-free lead plating.
RoHS compliant PDFN-8Q-5X6X1.1-1.27 KEY.

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Published: Mar 17, 2025 |