SVGQ041R7NL5V-2HS Datasheet (Silan Microelectronics)

SVGQ041R7NL5V-2HS, 40V N-CHANNEL MOSFET

SVGQ041R7NL5V-2HS is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche bre

SVGQ041R7NL5V-2HS Features

* AEC-Q101 qualified

* 160A, 40V, RDS(on)(typ.)=1.4m@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Extreme dv/dt rated

* 100% avalanche tested

* Pb-free lead plating

* RoHS compliant

* Wettable flanks

* Max. junction temperature: Tjmax.=175ºC