SVGQ041R2NLS-2HF Datasheet (Silan Microelectronics)

SVGQ041R2NLS-2HF, 40V N-CHANNEL MOSFET

SVGQ041R2NLS-2HF is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche break

SVGQ041R2NLS-2HF Features

* Compliant with AEC-Q101 standards.

* 255A, 40V, RDS(on)(typ.)=1.0m@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Extreme dv/dt rated

* 100% avalanche tested

* Pb-free lead plating

* RoHS compliant

* Max. junction temperature: Tjmax.=175 ºC KEY P