SVG032R4NL5, SVG032R4NL5-SilanSemiconductors Datasheet - Silan Semiconductors

SVG032R4NL5 30V N-CHANNEL MOSFET

SVG032R4NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown .

SVG032R4NL5 Features

* 100A, 30V, RDS(on)(typ.)=2.0m@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Extreme dv/dt rated

* 100% avalanche tested

* Pb-free lead plating

* RoHS compliant KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max. ID Qg.typ. Ratings 30 1.

SVG032R4NL5-SilanSemiconductors_removed.pdf

SVG032R4NL5 Datasheet Preview — This datasheet PDF includes multiple part numbers: SVG032R4NL5, SVG032R4NL5-SilanSemiconductors. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

SVG032R4NL5, SVG032R4NL5-SilanSemiconductors

Manufacturer:

Silan Semiconductors

File Size:

418.66 KB

Description:

30v n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: SVG032R4NL5, SVG032R4NL5-SilanSemiconductors.
Please refer to the document for exact specifications by model.

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SVG032R4NL5 SVG032R4NL5-SilanSemiconductors 30V N-CHANNEL MOSFET Silan Semiconductors

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