SVG062R0NT Datasheet (Silan Microelectronics)

SVG062R0NT, 60V N-CHANNEL MOSFET

2 SVG062R0NT is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakd

SVG062R0NT Features

* 240A, 60V, RDS(on)(typ.)=1.6m@VGS=10V

* Low gate charge T

* Low Crss

* Fast switching N

* Extreme dv/dt rated

* 100% avalanche tested

* Pb-free lead plating E

* RoHS compliant KEY PERFORMANCE PARAMETERS ID Characteristics VDS VGS(th) F RDS(on),max ID Qg.typ Rati