SVG062R0NT Datasheet - Silan Microelectronics

SVG062R0NT 60V N-CHANNEL MOSFET

2 SVG062R0NT is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakd.

SVG062R0NT Features

* 240A, 60V, RDS(on)(typ.)=1.6m@VGS=10V

* Low gate charge T

* Low Crss

* Fast switching N

* Extreme dv/dt rated

* 100% avalanche tested

* Pb-free lead plating E

* RoHS compliant KEY PERFORMANCE PARAMETERS ID Characteristics VDS VGS(th) F RDS(on),max ID Qg.typ Rati

SVG062R0NT-SilanMicroelectronics.pdf

SVG062R0NT Datasheet Preview — Preview of SVG062R0NT PDF

Datasheet Details

Part number:

SVG062R0NT

Manufacturer:

Silan Microelectronics

File Size:

325.83 KB

Description:

60v n-channel mosfet.

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SVG062R0NT SVG062R0NT 60V N-CHANNEL MOSFET Silan Microelectronics

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