SVG069R5ND, SVG069R5ND-SilanMicroelectronics Datasheet - Silan Microelectronics

SVG069R5ND 60V N-CHANNEL MOSFET

SVG069R5ND(MJ)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely .

SVG069R5ND Features

* 60A, 60V, RDS(on)(typ.)=8m@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability 12 3 TO-220-3L 12 3 TO-251J-3L ORDERING INFORMATION Part No. SVG069R5NDTR SVG069R5NMJ SVG069R5NT Package TO-252-2L TO-251J-3L TO-220-3L Marking 069R5ND 069R5NMJ

SVG069R5ND-SilanMicroelectronics_removed.pdf

SVG069R5ND Datasheet Preview — This datasheet PDF includes multiple part numbers: SVG069R5ND, SVG069R5ND-SilanMicroelectronics. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

SVG069R5ND, SVG069R5ND-SilanMicroelectronics

Manufacturer:

Silan Microelectronics

File Size:

283.22 KB

Description:

60v n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: SVG069R5ND, SVG069R5ND-SilanMicroelectronics.
Please refer to the document for exact specifications by model.

SVG069R5ND Distributor

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SVG069R5ND SVG069R5ND-SilanMicroelectronics 60V N-CHANNEL MOSFET Silan Microelectronics