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SVG069R5ND

60V N-CHANNEL MOSFET

SVG069R5ND Features

* 60A, 60V, RDS(on)(typ.)=8m@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability 12 3 TO-220-3L 12 3 TO-251J-3L ORDERING INFORMATION Part No. SVG069R5NDTR SVG069R5NMJ SVG069R5NT Package TO-252-2L TO-251J-3L TO-220-3L Marking 069R5ND 069R5NMJ

SVG069R5ND General Description

SVG069R5ND(MJ)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely .

SVG069R5ND Datasheet (283.22 KB)

Preview of SVG069R5ND PDF

Datasheet Details

Part number:

SVG069R5ND

Manufacturer:

Silan Microelectronics

File Size:

283.22 KB

Description:

60v n-channel mosfet.

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SVG069R5ND 60V N-CHANNEL MOSFET Silan Microelectronics

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