SVG031R7NL3C, SVG031R7NL3C-SilanMicroelectronics Datasheet - Silan Microelectronics

SVG031R7NL3C 30V N-CHANNEL MOSFET

SVG031R7NL3C is N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown to.

SVG031R7NL3C Features

* 115A, 30V, RDS(on)(typ.)=1.4m@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Extreme dv/dt rated

* 100% avalanche tested

* Pb-free lead plating

* RoHS compliant KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max ID Qg.typ Ratings 30 1.3~

SVG031R7NL3C-SilanMicroelectronics_removed.pdf

SVG031R7NL3C Datasheet Preview — This datasheet PDF includes multiple part numbers: SVG031R7NL3C, SVG031R7NL3C-SilanMicroelectronics. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

SVG031R7NL3C, SVG031R7NL3C-SilanMicroelectronics

Manufacturer:

Silan Microelectronics

File Size:

501.22 KB

Description:

30v n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: SVG031R7NL3C, SVG031R7NL3C-SilanMicroelectronics.
Please refer to the document for exact specifications by model.

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SVG031R7NL3C SVG031R7NL3C-SilanMicroelectronics 30V N-CHANNEL MOSFET Silan Microelectronics

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