SVG032R4NL3 Datasheet (Silan Microelectronics)

SVG032R4NL3, 30V N-CHANNEL MOSFET

SVG032R4NL3 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown

SVG032R4NL3 Features

* 100A, 30V, RDS(on)(typ.)=2.0m@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Extreme dv/dt rated

* 100% avalanche tested

* Pb-free lead plating

* RoHS compliant KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max. ID Qg.typ. Ratings 30 1.