SVG062R8NL5 Datasheet (Silan Microelectronics)

SVG062R8NL5, 60V N-CHANNEL MOSFET

SVG062R8NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown

SVG062R8NL5 Features

* 140A, 60V, RDS(on)(typ.)=2.4m@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Extreme dv/dt rated

* 100% avalanche tested

* Pb-free lead plating

* RoHS compliant S1 S2 S3 G4 8D 7D 6D 5D 8 7 6 5 65 87 4 23 1 1 32 4 PDFN-8-5X6X0.95-1.27 KEY PERFORMANC