SVG062R8NL5 Datasheet - Silan Microelectronics

SVG062R8NL5 60V N-CHANNEL MOSFET

SVG062R8NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown .

SVG062R8NL5 Features

* 140A, 60V, RDS(on)(typ.)=2.4m@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Extreme dv/dt rated

* 100% avalanche tested

* Pb-free lead plating

* RoHS compliant S1 S2 S3 G4 8D 7D 6D 5D 8 7 6 5 65 87 4 23 1 1 32 4 PDFN-8-5X6X0.95-1.27 KEY PERFORMANC

SVG062R8NL5-SilanMicroelectronics.pdf

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Datasheet Details

Part number:

SVG062R8NL5

Manufacturer:

Silan Microelectronics

File Size:

361.55 KB

Description:

60v n-channel mosfet.

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SVG062R8NL5 SVG062R8NL5 60V N-CHANNEL MOSFET Silan Microelectronics

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