SVG069R5ND-SilanMicroelectronics_removed.pdf
Datasheet Details
Part number:
SVG069R5NMJ, SVG069R5ND-SilanMicroelectronics
Manufacturer:
Silan Microelectronics
File Size:
283.22 KB
Description:
60v n-channel mosfet.
Note:
This datasheet PDF includes multiple part numbers: SVG069R5NMJ, SVG069R5ND-SilanMicroelectronics.
Please refer to the document for exact specifications by model.
SVG069R5NMJ, SVG069R5ND-SilanMicroelectronics, 60V N-CHANNEL MOSFET
SVG069R5ND(MJ)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.
The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.
This device is widely
SVG069R5NMJ Features
* 60A, 60V, RDS(on)(typ.)=8m@VGS=10V
* Low gate charge
* Low Crss
* Fast switching
* Improved dv/dt capability 12 3 TO-220-3L 12 3 TO-251J-3L ORDERING INFORMATION Part No. SVG069R5NDTR SVG069R5NMJ SVG069R5NT Package TO-252-2L TO-251J-3L TO-220-3L Marking 069R5ND 069R5NMJ
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