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SVGQ046R8NLPD - 40V DUAL N-CHANNEL MOSFET

Silan Microelectronics

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Datasheet Details

Part number	SVGQ046R8NLPD
Manufacturer	Silan Microelectronics
File Size	436.25 KB
Description	40V DUAL N-CHANNEL MOSFET
Datasheet	SVGQ046R8NLPD-SilanMicroelectronics.pdf

SVGQ046R8NLPD Product details

Description

SVGQ046R8NLPD is dual N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

Features

AEC-Q101 qualified.
63A, 40V, RDS(on)(typ. )=5.6m@VGS=10V.
Low gate charge.
Low Crss.
Fast switching.
Extreme dv/dt rated.
100% avalanche tested.
Pb-free lead plating.
RoHS compliant.
Max. junction temperature: Tjmax. =175 ºC KEY.

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Published: Jul 24, 2024 |