SVGQ046R8NLPD Datasheet (Silan Microelectronics)

SVGQ046R8NLPD, 40V DUAL N-CHANNEL MOSFET

SVGQ046R8NLPD is dual N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakd

SVGQ046R8NLPD Features

* AEC-Q101 qualified

* 63A, 40V, RDS(on)(typ.)=5.6m@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Extreme dv/dt rated

* 100% avalanche tested

* Pb-free lead plating

* RoHS compliant

* Max. junction temperature: Tjmax.=175 ºC KEY PERFORMANCE PARAMET