SVS6N80T Key Features
- 6A,800V, RDS(on)(typ.)=0.8Ω@VGS=10V
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- High peak current capability
- Part: SVS6N80T
- Manufacturer: Silan Microelectronics
- Size: 413.11 KB
Related Silan Microelectronics Datasheets
| Part Number | Description |
|---|---|
| SVS6N80D | TRANSISTOR |
| SVS6N80F | TRANSISTOR |
| SVS6N60D | TRANSISTOR |
| SVS60R190FJDD4 | 600V SUPER JUNCTION MOS POWER TRANSISTOR |
| SVS60R190KD4 | 600V SUPER JUNCTION MOS POWER TRANSISTOR |
SVS6N80T Description
SVS6N80T/D/F is an N-channel enhancement mode high voltage power MOSFETs produced using the new platform of Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.