SVS6N80F Datasheet | Silan Microelectronics

SVS6N80T/D/F_Datasheet 6A, 800V DP MOS POWER TRANSISTOR DESCRIPTION SVS6N80T/D/F is an N-channel enhancement mode high voltage power MOSFETs produced using the new platform of Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. Features - 6A,800V, RDS(on)(typ.)=0.8Ω@VGS=10V - New revolutionary high voltage technology - Ultra low gate charge - Periodic avalanche rated - Extreme dv/dt rated - High peak current capability ORDERING INFORMATION Part No. SVS6N80T SVS6N80D SVS6N80DTR SVS6N80F Package TO-220-3L TO-252-2L TO-252-2L TO-220F-3L Marking SVS6N80T SVS6N80D SVS6N80D SVS6N80F Material Pb free Halogen free Halogen free Pb...