| Title | |
| Description | SVSP11N65D/F/S/FJD/K/TD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switc... |
| Features |
11A,650V, RDS(on)(typ.)=0.33@VGS=10V New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability
12 3
TO-220F-3L
1 3
TO-252-2L
ORDERING INFORMATION
Part No. SVSP11N65DD2TR SVSP11N65FD2 SVSP11N65SD2 SVSP11N65SD2TR SVSP11N65FJDD2 SVSP11N65KD2 SVSP11N65TD2
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| Datasheet |
 SVSP11N65S Datasheet - 408.93KB |
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