SVT068R5NT Datasheet | Silan Microelectronics

DESCRIPTION SVT068R5NT/D/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. These devices are widely used in UPS, Power Management for Inverter Systems. FEATURES - 80A, 60V, RDS(on)(typ.)=7.0m@VGS=10V - Low gate charge - Low Crss - Fast switching - Improved dv/dt capability S1 8D S2 7D S3 6D G4 5D 3 1.Gate 2.Drain 3.Source TO-252-2L PDFN-8-5X6X0.95-1.27 1 2 3 TO-220-3L TO-263-2L ORDERING INFORMATION Part No. SVT068R5NT SVT068R5NDTR SVT068R5NSTR SVT068R5NL5TR Package TO-220-3L TO-252-2L TO-263-2L PDFN-8-5×6×0.95-1.27 Marking 068R5NT 068R5ND 068R5NS 068R5NL5 Hazardous Substance Control Pb free Halogen free Halogen free Halogen free Packing Type Tube Tape&Reel Tape&Reel Tape&Reel HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //.silan..cn Rev.:1.1 Page 1 of 11 Silan Microelectronics SVT068R5NT/D/S/L5_Datasheet ABSOLUTE MAXIMUM RATINGS (UNLESS OTHERWISE NOTED, TC=25C) Characteristics...