SVT1040SA Datasheet | Silan Microelectronics

DESCRIPTION SVT1040SA is an N-channel enhancement mode power MOS field effect transistor which is produced using Trench Mos technology. The improved trench stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in UPS, DC-DC converters. FEATURES - 10A, 40V, RDS(on)(typ.)=15m@VGS=10V - Low gate charge - Low Crss - Fast switching - Improved dv/dt capability 1 1、3. Source 3 2、4. Gate 7、8；5、6. Drain 1 23 4 SOP-8-225-1.27 ORDERING INFORMATION Part No. SVT1040SA SVT1040SATR Package SOP-8-225-1.27 SOP-8-225-1.27 Marking SVT1040 SVT1040 Hazardous substance control Halogen free Halogen free Packing Tube Tape & reel HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //.silan..cn Rev.:1.2 Page 1 of 8 Silan Microelectronics SVT1040SA_Datasheet ABSOLUTE MAXIMUM RATINGS (PER DEVICE, UNLESS OTHERWISE NOTED, TJ=25C) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed TC=25°C TC=100°C Power Dissipation (TC=25C) -Derate above 25C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Range Storage Temperature Range Symbol VDS...