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SBT107WS - Small Signal Schottky Barrier Diodes

Download the SBT107WS datasheet PDF. This datasheet also covers the SBT107WS_Silicon variant, as both devices belong to the same small signal schottky barrier diodes family and are provided as variant models within a single manufacturer datasheet.

Features

  • and Advantages: Low forward voltage drop(VF) Low reverse leakage current (IR) Very small conduction power loss Very small switching power loss Very high switching speed Very high reliability www. DataSheet4U. com Symbol Min. Typ. Max. Unit V(BR)R 30 280 500 600 1.0 µA pF mV V Electrical Characteristics : (@TA=25°C unless otherwise specified) Characteristic Reverse Breakdown Voltage (Note 2) Test Conditions IR=100µA @IF=2.0mA @IF=15mA @ IF=50mA @IF=100mA VR=25V VR=0V, f=1.0MHZ Forward Voltage (.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SBT107WS_Silicon-BasedTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SBT107WS
Manufacturer Silicon-Based Technology
File Size 189.35 KB
Description Small Signal Schottky Barrier Diodes
Datasheet download datasheet SBT107WS Datasheet

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Other Datasheets by Silicon-Based Technology

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Silicon-Based Technology Corp. Small-Signal Schottky Barrier Diodes SBT107WS Series SBT107WS series are Schottky Barrier Diodes fabricated by a series of proprietary Schottky barrier patents and technologies (SBT®) developed by Silicon-Based Technology Corporation, which exhibit high-performance characteristics for modern switching, conversion and protection applications with high speed and low power consumptions. The package types as described in this data sheet are set forth in routine production; other packages are available upon special orders. Features and Advantages: Low forward voltage drop(VF) Low reverse leakage current (IR) Very small conduction power loss Very small switching power loss Very high switching speed Very high reliability www.DataSheet4U.
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