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SSM9922GEO - DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

This page provides the datasheet information for the SSM9922GEO, a member of the SSM9922EO DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS family.

Datasheet Summary

Description

Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

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Datasheet Details

Part number SSM9922GEO
Manufacturer Silicon Standard
File Size 237.72 KB
Description DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Datasheet download datasheet SSM9922GEO Datasheet
Additional preview pages of the SSM9922GEO datasheet.

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Full PDF Text Transcription

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SSM9922(G)EO DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance Capable of 2.5V gate drive Ideal for DC/DC battery applications Description G2 S2 S2 D2 TSSOP-8 Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G1 S1 S1 D1 BV DSS RDS(ON) ID 20V 15mΩ 6.8A D1 D2 G1 G2 S1 S2 This device is available with Pb-free lead finish (second-level interconnect) as SSM9922GEO. Absolute Maximum Ratings Symbol Parameter Rating Units VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C Drain-Source Voltage Gate-Source Voltage Drain Current3, VG S @ 4.5V Drain Current3, VGS @ 4.5V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor 20 ±12 6.
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