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SSM9922GEO, SSM9922EO - DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

The SSM9922GEO by Silicon Standard is a DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS. Below is the official datasheet preview.

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Official preview page of the SSM9922GEO DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS datasheet (Silicon Standard).

Datasheet Details

Part number SSM9922GEO, SSM9922EO
Manufacturer Silicon Standard
File Size 237.72 KB
Description DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Datasheet download datasheet SSM9922EO-SiliconStandard.pdf
Note This datasheet PDF includes multiple part numbers: SSM9922GEO, SSM9922EO.
Please refer to the document for exact specifications by model.
Additional preview pages of the SSM9922GEO datasheet.

SSM9922GEO Product details

Description

G2 S2 S2 D2 TSSOP-8 Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.G1 S1 S1 D1 BV DSS RDS(ON) ID 20V 15mΩ 6.8A D1 D2 G1 G2 S1 S2 This device is available with Pb-free lead finish (second-level interconnect) as SSM9922GEO.Absolute Maximum Ratings Symbol Parameter Rating Units VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C Drain-Source Voltage Gate-Sou

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