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SSM9928EO Datasheet DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

Manufacturer: Silicon Standard

Datasheet Details

Part number SSM9928EO
Manufacturer Silicon Standard
File Size 253.60 KB
Description DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Download SSM9928EO Download (PDF)

General Description

G2 S2 S2 D2 TSSOP-8 Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

G1 S1 S1 D1 BV DSS RDS(ON) ID 20V 23mΩ 5A D1 D2 G1 G2 S1 S2 This device is available with Pb-free lead finish (second-level interconnect) as SSM9928GEO.

Absolute Maximum Ratings Symbol Parameter Rating Units VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C Drain-Source Voltage Gate-Source Voltage Drain Current3, VGS @ 4.5V Drain Current3, VGS @ 4.5V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor 20 ±12 5 3.5 25 1 0.008 V V A A A W W/°C TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 °C °C Thermal Data Symbol Rthj-a Parameter Thermal Resistance

Overview

SSM9928(G)EO DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance Capable of 2.