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SSM9922GEO - DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

Download the SSM9922GEO datasheet PDF. This datasheet also covers the SSM9922EO variant, as both devices belong to the same dual n-channel enhancement-mode power mosfets family and are provided as variant models within a single manufacturer datasheet.

General Description

Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

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Note: The manufacturer provides a single datasheet file (SSM9922EO-SiliconStandard.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SSM9922GEO
Manufacturer Silicon Standard
File Size 237.72 KB
Description DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Datasheet download datasheet SSM9922GEO Datasheet

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Other Datasheets by Silicon Standard

Part Number Description
SSM9922EO DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SSM9922(G)EO DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance Capable of 2.5V gate drive Ideal for DC/DC battery applications Description G2 S2 S2 D2 TSSOP-8 Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G1 S1 S1 D1 BV DSS RDS(ON) ID 20V 15mΩ 6.8A D1 D2 G1 G2 S1 S2 This device is available with Pb-free lead finish (second-level interconnect) as SSM9922GEO. Absolute Maximum Ratings Symbol Parameter Rating Units VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C Drain-Source Voltage Gate-Source Voltage Drain Current3, VG S @ 4.5V Drain Current3, VGS @ 4.5V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor 20 ±12 6.