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SST12LP07 Datasheet Preview

SST12LP07 Datasheet

High-Gain Power Amplifier

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2.4 GHz High-Power, High-Gain Power Amplifier
A Microchip Technology Company
SST12LP07
Data Sheet
The SST12LP07 is a versatile power amplifier based on the highly-reliable InGaP/
GaAs HBT technology. Easily configured for high-power applications with good
power-added efficiency while operating over the 2.4- 2.5 GHz frequency band, the
SST12LP07 has excellent linearity, typically ~2.5% added EVM at 19 dBm output
power, while meeting 802.11g spectrum mask at 22 dBm. The SST12LP07 fea-
tures easy board-level usage along with high-speed power-up/down control
through a single combined reference voltage pin, and is offered in a 16-contact
VQFN package.
Features
• High Gain:
– Typically 29 dB gain across 2.4–2.5 GHz over tempera-
ture 0°C to +85°C
• High linear output power:
– >26 dBm P1dB
- Please refer to “Absolute Maximum Stress Ratings” on
page 5
– Meets 802.11g OFDM ACPR requirement up to 22 dBm
– ~2.5% added EVM up to 19 dBm for 54 Mbps 802.11g
signal
– Meets 802.11b ACPR requirement up to 22 dBm
• High power-added efficiency/Low operating cur-
rent for both 802.11g/b applications
– ~22%/220 mA @ POUT = 22 dBm for 802.11g
– ~21%/230 mA @ POUT = 22 dBm for 802.11b
• Single-pin low IREF power-up/down control
– IREF <2 mA
• Low idle current
– ~70 mA ICQ
• High-speed power-up/down
– Turn on/off time (10%- 90%) <100 ns
– Typical power-up/down delay with driver delay included
<200 ns
• High temperature stability
– ~1 dB gain/power variation between 0°C to +85°C
• Low shut-down current (< 0.1 µA)
• Excellent On-chip power detection
– <+/- 0.3dB variation between 0°C to +85°C
– <+/- 0.4dB variation with 2:1 VSWR mismatch
– <+/- 0.3dB variation Ch1 through Ch14
• 20 dB dynamic range on-chip power detection
• Simple input/output matching
• Packages available
– 16-contact VQFN – 3mm x 3mm
• All non-Pb (lead-free) devices are RoHS compliant
Applications
• WLAN (IEEE 802.11g/b)
• Home RF
• Cordless phones
• 2.4 GHz ISM wireless equipment
©2011 Silicon Storage Technology, Inc.
www.microchip.com
DS75033A
10/11




Silicon Storage Technology

SST12LP07 Datasheet Preview

SST12LP07 Datasheet

High-Gain Power Amplifier

No Preview Available !

A Microchip Technology Company
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07
Product Description
Data Sheet
The SST12LP07 is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT tech-
nology.
The SST12LP07 can be easily configured for high-power applications with good power-added effi-
ciency while operating over the 2.4- 2.5 GHz frequency band. This device typically provides 29 dB
gain with 22% power-added efficiency @ POUT = 22 dBm for 802.11g and 21% power-added effi-
ciency @ POUT = 22 dBm for 802.11b.
The SST12LP07 has excellent linearity, typically ~2.5% added EVM at 19 dBm output power which
is essential for 54 Mbps 802.11g/n operation while meeting 802.11g spectrum mask at 22 dBm.
The SST12LP07 can also be configured for high-efficiency operation, typically 17 dBm linear 54
Mbps 802.11g output power at 85 mA total power consumption. High-efficiency operation is desir-
able in embedded applications such as in hand-held units.
The SST12LP07 also features easy board-level usage along with high-speed power-up/down con-
trol through a single combined reference voltage pin. Ultra-low reference current (total IREF ~2 mA)
makes the SST12LP07 controllable by an on/off switching signal directly from the baseband chip.
These features coupled with low operating current make the SST12LP07 ideal for the final stage
power amplification in battery-powered 802.11g/b WLAN transmitter applications.
The SST12LP07 has an excellent on-chip, single-ended power detector, which features wide-range
(~20 dB) with dB-wise linearization and high stability over temperature (< +/-0.3 dB 0°C to +85°C), fre-
quency (<+/-0.3 dB across Channels 1 through 14), and output load (<+/-0.4 dB with 2:1 output VSWR
all phases). The excellent on-chip power detector provides a reliable solution to board-level power con-
trol.
The SST12LP07 is offered in a 16-contact VQFN package. See Figure 2 for pin assignments and Table
1 for pin descriptions.
©2011 Silicon Storage Technology, Inc.
2
DS75033A
10/11


Part Number SST12LP07
Description High-Gain Power Amplifier
Maker Silicon Storage Technology
PDF Download

SST12LP07 Datasheet PDF






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