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SST12LP07A - High-Gain Power Amplifier

Key Features

  • High Gain:.
  • Typically 28 dB gain across 2.4~2.5 GHz over temperature 0°C to +85°C.
  • High linear output power:.
  • >28 dBm P1dB - Please refer to “Absolute Maximum Stress Ratings” on page 5.
  • Meets 802.11g OFDM AC.

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Datasheet Details

Part number SST12LP07A
Manufacturer Silicon Storage Technology
File Size 290.83 KB
Description High-Gain Power Amplifier
Datasheet download datasheet SST12LP07A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PCROONPFRIIDEETANTRIYALAND 2.4 GHz High-Power, High-Gain Power Amplifier A Microchip Technology Company SST12LP07A Data Sheet The SST12LP07A is a versatile power amplifier based on the highly-reliable InGaP/ GaAs HBT technology. It is easily configured for high-power applications with excellent (30.8%) power-added efficiency, operating over the 2.4- 2.5 GHz frequency band and meeting 802.11 b/g spectrum mask at 23.5 dBm. The SST12LP07A has excellent linearity, typically ~2.5% added EVM at 20 dBm output power, which is essential for 54 Mbps 802.g/n operation. The Power Amplifier has an excellent on-chip, single-ended power detector, providing a reliable solution to board-level power control. The SST12LP07A is offered in a 12-contact XQFN package.