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SST12LP07 Datasheet High-gain Power Amplifier

Manufacturer: Silicon Storage Technology

Overview: 2.4 GHz High-Power, High-Gain Power Amplifier A Microchip Technology pany SST12LP07 Data Sheet The SST12LP07 is a versatile power amplifier based on the highly-reliable InGaP/ GaAs HBT technology. Easily configured for high-power applications with good power-added efficiency while operating over the 2.4- 2.5 GHz frequency band, the SST12LP07 has excellent linearity, typically ~2.5% added EVM at 19 dBm output power, while meeting 802.11g spectrum mask at 22 dBm.

Key Features

  • easy board-level usage along with high-speed power-up/down control through a single combined reference voltage pin, and is offered in a 16-contact VQFN package. Features.
  • High Gain:.
  • Typically 29 dB gain across 2.4.
  • 2.5 GHz over temperature 0°C to +85°C.
  • High linear output power:.
  • >26 dBm P1dB - Please refer to “Absolute Maximum Stress Ratings” on page 5.
  • Meets 802.11g OFDM ACPR requirement up to 22 dBm.
  • ~2.5% added EVM up to 19 dBm f.

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SST12LP07 Distributor