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SST12LP08 - High-Gain Power Amplifier

Key Features

  • easy board-level usage along with high-speed power-up/down control through a single combined reference voltage pin and is offered in both 12-contact XQFN and 6-contact XSON packages. Features.
  • High Gain:.
  • Typically 30 dB gain across 2.4~2.5 GHz over temperature 0°C to +85°C.
  • High linear output power:.
  • >28 dBm P1dB - Please refer to “Absolute Maximum Stress Ratings” on page 6.
  • Meets 802.11g OFDM ACPR requirement up to 23.5 dBm.
  • ~3% added EVM.

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Datasheet Details

Part number SST12LP08
Manufacturer Silicon Storage Technology
File Size 352.24 KB
Description High-Gain Power Amplifier
Datasheet download datasheet SST12LP08 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PCROONPFRIIDEETANTRIYALAND 2.4 GHz High-Power, High-Gain Power Amplifier A Microchip Technology Company SST12LP08 Data Sheet The SST12LP08 is a versatile power amplifier based on the highly-reliable InGaP/ GaAs HBT technology. Easily configured for linear high-power applications with excellent power-added efficiency while operating over the 2.4- 2.5 GHz frequency band, it typically provides 30 dB gain with 34% power-added efficiency, while meeting 802.11b/g spectrum mask at 23.5 dBm. The SST12LP08 also features easy board-level usage along with high-speed power-up/down control through a single combined reference voltage pin and is offered in both 12-contact XQFN and 6-contact XSON packages. Features • High Gain: – Typically 30 dB gain across 2.4~2.