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SST12LP07A Datasheet Preview

SST12LP07A Datasheet

High-Gain Power Amplifier

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2.4 GHz High-Power, High-Gain Power Amplifier
A Microchip Technology Company
SST12LP07A
Data Sheet
The SST12LP07A is a versatile power amplifier based on the highly-reliable InGaP/
GaAs HBT technology. It is easily configured for high-power applications with excel-
lent (30.8%) power-added efficiency, operating over the 2.4- 2.5 GHz frequency band
and meeting 802.11 b/g spectrum mask at 23.5 dBm. The SST12LP07A has excellent
linearity, typically ~2.5% added EVM at 20 dBm output power, which is essential for 54
Mbps 802.g/n operation. The Power Amplifier has an excellent on-chip, single-ended
power detector, providing a reliable solution to board-level power control. The
SST12LP07A is offered in a 12-contact XQFN package.
Features
• High Gain:
– Typically 28 dB gain across 2.4~2.5 GHz over tempera-
ture 0°C to +85°C
• High linear output power:
– >28 dBm P1dB
- Please refer to “Absolute Maximum Stress Ratings” on
page 5
– Meets 802.11g OFDM ACPR requirement up to 23.5 dBm
– ~2.5% added EVM up to 20 dBm for
54 Mbps 802.11g signal
– Meets 802.11b ACPR requirement up to 24 dBm
• High power-added efficiency/Low operating cur-
rent for both 802.11g/b applications
– ~30.8%/220 mA @ POUT = 23.5 dBm for both 802.11g
and 802.11b
• Single-pin low IREF power-up/down control
– IREF <2 mA
• Low idle current
– ~70 mA ICQ
• High-speed power-up/down
– Turn on/off time (10%- 90%) <100 ns
– Typical power-up/down delay with driver delay included
<200 ns
• High temperature stability
– ~1 dB gain/power variation between 0°C to +85°C
• Excellent On-chip power detection
• 20 dB dynamic range on-chip power detection
• Simple input/output matching
• Packages available
– 12-contact XQFN – 2mm x 2mm
• All non-Pb (lead-free) devices are RoHS compliant
Applications
• WLAN (IEEE 802.11g/b)
• Home RF
• Cordless phones
• 2.4 GHz ISM wireless equipment
©2012 Silicon Storage Technology, Inc.
www.microchip.com
DS75035B
05/12




Silicon Storage Technology

SST12LP07A Datasheet Preview

SST12LP07A Datasheet

High-Gain Power Amplifier

No Preview Available !

A Microchip Technology Company
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07A
Product Description
Data Sheet
The SST12LP07A is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT tech-
nology.
The SST12LP07A can be easily configured for high-power applications with good power-added effi-
ciency while operating over the 2.4- 2.5 GHz frequency band. It typically provides 28 dB gain with
30.8% power-added efficiency @ POUT = 23.5 dBm for both 802.11g and 802.11b.
The SST12LP07A has excellent linearity, typically ~2.5% added EVM at 20 dBm output power which is
essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 23.5 dBm.
The SST12LP07A also features easy board-level usage along with high-speed power-up/down control
through a single combined reference voltage pin. Ultra-low reference current (total IREF ~2 mA) makes
the SST12LP07A controllable by an on/off switching signal directly from the baseband chip. These fea-
tures coupled with low operating current make the SST12LP07A ideal for the final stage power amplifi-
cation in battery-powered 802.11g/b WLAN transmitter applications.
The SST12LP07A has an excellent on-chip, single-ended power detector, which features wide-range
(>15 dB) with dB-wise linearization. The excellent on-chip power detector provides a reliable solution
to board-level power control.
The SST12LP07A is offered in 12-contact XQFN package. See Figure 2 for pin assignments and Table
1 for pin descriptions.
©2012 Silicon Storage Technology, Inc.
2
DS75035B
05/12


Part Number SST12LP07A
Description High-Gain Power Amplifier
Maker Silicon Storage Technology
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