Datasheet4U Logo Datasheet4U.com

SST28SF040A - (SST28xF040A) 4 Mbit (512K x8) SuperFlash EEPROM

Description

The SST28SF/VF040A are 512K x8 bit CMOS SectorErase, Byte-Program EEPROMs.

The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology.

Features

  • Single Voltage Read and Write Operations.
  • 5.0V-only for SST28SF040A.
  • 2.7-3.6V for SST28VF040A.
  • Superior Reliability.
  • Endurance: 100,000 Cycles (typical).
  • Greater than 100 years Data Retention.
  • Memory Organization: 512K x8.
  • Sector-Erase Capability: 256 Bytes per Sector.
  • Low Power Consumption.
  • Active Current: 15 mA (typical) for 5.0V and 10 mA (typical) for 2.7-3.6V.
  • Standby Current: 5 µA (typical).

📥 Download Datasheet

Datasheet Details

Part number SST28SF040A
Manufacturer Silicon Storage Technology
File Size 323.44 KB
Description (SST28xF040A) 4 Mbit (512K x8) SuperFlash EEPROM
Datasheet download datasheet SST28SF040A Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SST2007-C P-Channel Enhancement Mode Power MOSFET SeCoS
SST201 N-Channel JFETs Vishay
SST201 Amplifier Micross
SST2019L-C Dual N-Ch Enhancement Mode Power MOSFET SeCoS
SST202 N-Channel JFETs Vishay

Other Datasheets by Silicon Storage Technology

Part Number Description
SST28SF040 (SST28xF040) 4 Mbit (512K x8) SuperFlash EEPROM
SST28LF040 (SST28xF040) 4 Mbit (512K x8) SuperFlash EEPROM
SST28VF040 (SST28xF040) 4 Mbit (512K x8) SuperFlash EEPROM
SST28VF040A (SST28xF040A) 4 Mbit (512K x8) SuperFlash EEPROM
SST25LF080A 8 Mbit SPI Serial Flash

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
4 Mbit (512K x8) SuperFlash EEPROM SST28SF040A / SST28VF040A SST28SF040A / SST28VF040A5.0 & 2.7 4Mb (x8) Byte-Program, Small Erase Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for SST28SF040A – 2.7-3.6V for SST28VF040A • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Memory Organization: 512K x8 • Sector-Erase Capability: 256 Bytes per Sector • Low Power Consumption – Active Current: 15 mA (typical) for 5.0V and 10 mA (typical) for 2.7-3.6V – Standby Current: 5 µA (typical) • Fast Sector-Erase/Byte-Program Operation – Byte-Program Time: 35 µs (typical) – Sector-Erase Time: 2 ms (typical) – Complete Memory Rewrite: 20 sec (typical) • Fast Read Access Time – 5.
Published: |