2N7002KG8 - MOSFET

Silikron

General Description

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Key Features

Advanced trench MOSFET process technology.
Special designed for PWM, load switching and general purpose.

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2N7002KG8 mosfet by Silikron - Datasheet Preview

Datasheet Details

Part number	2N7002KG8
Manufacturer	Silikron
File Size	440.84 KB
Description	MOSFET
Datasheet	2N7002KG8 Datasheet

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Full PDF Text Transcription (Reference)

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Main Product Characteristics: VDSS 60V RDS(on) 7.5ohm(max.) ID A Features and Benefits:  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature SOT-363 2N7002KG8 Schematic diagram Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.