Datasheet4U Logo Datasheet4U.com

SSF2116EJ3 - MOSFET

General Description

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Key Features

  • Advanced MOSFET process technology.
  • Special designed for PWM, load switching and general purpose.

📥 Download Datasheet

Datasheet Details

Part number SSF2116EJ3
Manufacturer Silikron
File Size 326.29 KB
Description MOSFET
Datasheet download datasheet SSF2116EJ3 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SSF2116 20V N-Channel + P-Channel Complementary MOSFET GOOD-ARK
SSF2102 N-Ch Enhancement Mode Power MOSFET SeCoS
SSF2122E 20V Dual N-Channel MOSFET GOOD-ARK
SSF2160G4 20V N-Channel MOSFET GOOD-ARK
SSF20K8NE-C N-Channel Enhancement Mode Power MOSFET SeCoS

Other Datasheets by Silikron

Part Number Description
SSF2112H2 MOSFET
SSF2129H3 MOSFET
SSF2145CH6 MOSFET
SSF20N50UH MOSFET
SSF20N60H MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Main Product Characteristics: VDSS 20V RDS(on) 14.5mohm（typ.） ID 8.5A DFN2X5-6L-EP SSF2116EJ3 Marking and pin Assignment Schematic diagram Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.