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SDD120N18 Datasheet Diode-diode Modules

Manufacturer: Sirectifier

Overview: SDD120 Diode-Diode Modules Type SDD120N08 SDD120N12 SDD120N14 SDD120N16 SDD120N18 VRSM V 900 1300 1500 1700 1900 VRRM V 800 1200 1400 1600 1800 Dimensions in mm (1mm=0.0394") Symbol Test Conditions IFRMS IFAVM IFSM i2dt TVJ=TVJM TC=105oC; 180o sine TVJ=45oC VR=0 TVJ=TVJM VR=0 TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine TVJ TVJM Tstg VISOL 50/60Hz, RMS IISOL<_1mA t=1min t=1s Md Mounting torque (M5) Terminal connection torque (M5) Weight Typical including screws Maximum Ratings 180 120 2800 3300 2500 2750 39200 45000 31200 31300 -40...+150 150 -40...+125 3000 3600 2.5-4/22-35 2.5-4/22-35 90 Unit A A A2s oC V~ Nm/lb.in. g SDD120 Diode-Diode Modules Symbol Test Conditions IR VF VTO rT QS IRM RthJC RthJK dS dA a TVJ=TVJM; VR=VRRM IF=300A; TVJ=25oC For power-loss calculations only TVJ=TVJM TVJ=125oC; IF=50A; -di/dt=6A/us per diode; DC current per module per diode; DC current per module Creepage distance on surface Strike distance through air Maximum allowable acceleration Characteristic Values 15 1.43 0.75 1.95 170 45 0.26 0.13 0.46 0.23 12.7 9.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • International standard package.
  • Copper base plate.
  • Planar passivated chips.
  • Isolation voltage 3600 V~.

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More Datasheets from Sirectifier

Part Number Description
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SDD120N16 Diode-Diode Modules
SDD120N08 Diode-Diode Modules
SDD120 Diode-Diode Modules
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SDD10N01 Discrete Diodes
SDD10N02 Discrete Diodes
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