SHF-0189Z Datasheet (GaAs HFET) | Sirenza Microdevices

Part: SHF-0189Z
Manufacturer: Sirenza Microdevices
Size: 102.80 KB

SHF-0189Z Key Features

Now available in Lead Free, RoHS pounds that contain no antimony trioxide nor halogenated fire retarpliant, & Green Pack
High Linearity Performance at 1.96 GHz +27 dBm P1dB +40 dBm Output IP3 +16.5 dB Gain
High Drain Efficiency
See App Note AN-031 for circuit details

Other SHF-0189Z Datasheets

Manufacturer	Part Number	Description
RF Micro Devices	SHF-0189Z	0.5WATT GaAs HFET
RF Micro Devices	SHF-0189	0.5WATT GaAs HFET

View all SHF-0189Z datasheets →

SHF-0189Z Description

Sirenza Microdevices’ SHF-0189 is a high performance AlGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity. Output power at 1dB pression for the SHF-0189 is +27 dBm when biased for Class AB operation at 8V,100mA.