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Sirenza Microdevices

SPF-2086TK Datasheet Preview

SPF-2086TK Datasheet

Low Noise pHEMT GaAs FET

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Product Description
Sirenza Microdevices’ SPF-2086TK is a high performance
0.25µm pHEMT Gallium Arsenide FET with Schottky barrier
gates. This 300µm device is ideally biased at 3V,20mA for lowest
noise performance and battery powered requirements. At
5V,40mA the device delivers excellent output TOI of 32 dBm.
It provides ideal performance as driver stages in many
commercial, industrial and military LNA applications.
SPF-2086TK
Low Noise pHEMT GaAs FET
0.1 - 6 GHz Operation
35
30
25
20
15
10
5
www.DataSheet4U.com
0
0
Typical Gain Performance
3v, 20mA
5v, 40mA
Gmax
Product Features
22 dB Gmax at 1.9 GHz
0.4 dB FMIN at 1.9 GHz
+32 dBm Output IP3
+20 dBm Output Power at 1dB Compression
Applications
Gain LNA for Analog and Digital Wireless Systems
3G, Cellular, PCS
2 4 6 8 10 12 Fixed Wireless, Pager Systems
Frequency (GHz)
Driver Stage for low power applications
Symbol
Gmax
S21
FMIN
OIP3
P1dB
IDSS
gm
VP
BVGS
BVGD
Rth
Device Characteristics, T = 25°C
VDS=3V, IDQ=20mA (unless otherwise noted)
Maximum Available Gain
ZS=ZS*, ZL=ZL*
Insertion Gain
ZS=ZL= 50 Ohms
Minimum Noise Figure
ZS=ΓOPT , ZL=ZLOPT
Output Third Order Intercept Point
ZS=ZSOPT , ZL=ZLOPT
Output 1dB Compression Point
ZS=ZSOPT, ZL=ZLOPT
Saturated Drain Current
VDS = VDSP, VGS= 0V
Tranconductance:
VDS = VDSP, VGS= -0.25V
Pinch-Off Voltage:
VDS = 2.0V, IDS = 150µA
Gate-to-Source Breakdown Voltage
IGS = 0.3mA, drain open
Gate-to-Drain Breakdown Voltage
IGD = 0.3mA, VGS = -3.0V
Thermal Resistance, junction-to-lead
Test Condition
[1] = 100% Tested
f = 0.9 GHz
f = 1.9 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 1.9 GHz [1]
f = 1 GHz
f = 2 GHz
f = 4 GHz
f = 6 GHz
VDS=5.0V, IDQ=40mA
VDS=3.0V, IDQ=20mA
VDS=5.0V, IDQ=40mA
VDS=3.0V, IDQ=20mA
[1]
[1]
[1]
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
mA
mS
V
V
V
oC/W
Min.
-
-
-
-
16.0
-
-
-
-
-
-
-
-
30
-
-1.5
-
-
-
Typ.
25.2
21.8
18.7
13.5
17.7
0.3
0.4
0.5
0.7
32
28
20
15
85
112
-1.0
-17
-17
110
Max.
-
-
-
-
19.4
-
-
-
-
-
-
-
-
140
-
-0.5
-8
-8
-
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza
Microdevices product for use in life-support devices and/or systems.
Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
1 EDS-101225 Rev. D




Sirenza Microdevices

SPF-2086TK Datasheet Preview

SPF-2086TK Datasheet

Low Noise pHEMT GaAs FET

No Preview Available !

SPF-2086TK Low Noise FET
Absolute Maximum Ratings
Operation of this device beyond any one of these
parameters may cause permanent damage.
Parameter
Drain Current
MTTF is inversely proportional to the device junction
temperature. For junction temperature and MTTF
considerations the operating conditions should also
satisfy the following experssions:
Forward Gate Current
Reverse Gate Current
Drain-to-Source Voltage
Gate-to-Drain Voltage
PDC - POUT < (TJ - TL) / RTH
where:
PDC = IDS * VDS (W)
POUT = RF Output Power (W)
TJ = Junction Temperature (°C)
TL = Lead Temperature (pin 4) (°C)
RTH = Thermal Resistance (°C/W)
Gate-to-Source Voltage
RF Input Power
Operating Temperature
Storage Temperature Range
Power Dissipation
Channel Temperature
Symbol
IDS
IGSF
IGSR
VDS
VGD
VGS
PIN
TOP
Tstor
PDISS
TJ
Value
IDSS
0.3
0.3
+7
-8
<-5 or >0
100
-40 to +85
-40 to +150
600
+150
Unit
mA
mA
mA
V
V
V
mW
°C
°C
mW
°C
Noise parameters, at typical operating frequencies
Bias VDS=3.0V, IDS=20mA
FREQ GHZ
FMIN dB
|G OPT|
G OPT ANG rN W GA dB
1.0 0.28 0.74
17 0.22 23.1
2.0 0.44 0.69 31 0.18 17.8
4.0 0.54 0.54 84 0.09 13.9
6.0 0.70 0.28 179 0.05 12.2
FREQ GHZ
1.0
2.0
4.0
6.0
Bias VDS=5.0V, IDS=40mA
FMIN dB
|G OPT|
G OPT ANG
0.34 0.76
19
rN W
0.27
GA dB
23.9
0.55 0.67
36 0.23 19.1
0.75 0.47
93 0.11 15.0
1.04
0.31
-170
0.06 12.9
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-101225 Rev. D


Part Number SPF-2086TK
Description Low Noise pHEMT GaAs FET
Maker Sirenza Microdevices
Total Page 5 Pages
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