SFS1829 Features
* Low-Level Gate Characteristics IGT = 200 µA (Max) @ 25oC Low Holding Current IH = 1 mA (Max) @ 25oC Anode Common to Case Hermetically Sealed TX, TXV, S-Level Screening Available. Consult Factory 1.6 AMPS 200 ─ 400 VOLTS SILICON CONTROLLED
SFS1826_SolidStatesDevices.pdf
Datasheet Details
SFS1829, SFS1826
Solid States Devices
126.17 KB
(sfs1826 - sfs1829) silicon controlled rectifier.
This datasheet PDF includes multiple part numbers: SFS1829, SFS1826.
Please refer to the document for exact specifications by model.
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SFS1829 Distributor
