SFS1829
FEATURES
:
- -
- -
- - Low-Level Gate Characteristics IGT = 200 µA (Max) @ 25o C Low Holding Current IH = 1 m A (Max) @ 25o C Anode mon to Case Hermetically Sealed TX, TXV, S-Level Screening Available. Consult Factory
1.6 AMPS 200 ─ 400 VOLTS SILICON CONTROLLED RECTIFIER
MAXIMUM RATINGS
Peak Repetitive Reverse Voltage and DC Blocking Voltage SFS1826 SFS1827 SFS1828 SFS1829 SFS1826 SFS1827 SFS1828 SFS1829
Symbol
VDRM VRRM
Value
200 250 300 400 300 350 400 500 1.6 1.0 0.7 15 0.1 0.01 0.1 6.0 -65 to +200 -65 to +200 72
Units
Volts
Non-Repetitive Peak Reverse Blocking Voltage (t < 5.0 ms) RMS On-State Current (All Conduction Angles) Average On-State Current Peak Non-Repetitive Surge Current (One Cycle, 60 Hz, TC = 80o C ) Peak Gate Power Average Gate Power Peak Gate Current Peak Gate Voltage Operating Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction to Case
VRSM
Volts
IT (RMS) TC = 50o C TA = 25o C IT (AV) ITSM PGM PG (AV) IGM VGM TJ Tstg RθJC
Amps Amps...
