| Description | 1 KS1 2 G1 3 Temp. Monitoring 4 Temp. Monitoring 5 G2 6 KS2 7 D2 8 S2 9 S1 10 D1 SD11912 SiC Dual MOSFET Power Module - 1 VDS = 1200V RDSon = 13mΩ ID = 105A @ TC = 25°C FEATURES & BENEFITS • SUPERIOR SYSTEM EFFICIENCY DUE TO LOW SWITCHING AND CONDUCTIONS LOSSES OF SIC • OUTSTANDING POWER CONVERSION EFFICIENCY AT HIGH FREQUENCY OPERATION • HIGH SPEED SWITCHING W/ LOW CAPACITANC... |
| Features |
& BENEFITS • SUPERIOR SYSTEM EFFICIENCY DUE TO LOW SWITCHING AND CONDUCTIONS LOSSES OF SIC • OUTSTANDING POWER CONVERSION EFFICIENCY AT HIGH FREQUENCY OPERATION • HIGH SPEED SWITCHING W/ LOW CAPACITANCE • REDUCED PARASITIC INDUCTANCE AND CAPACITANCE • REAL KELVIN SOURCE CONNECTION FOR STABLE GATE DRIVE • ISOLATED BACKSIDE FOR DIRECT MOUNT TO HEATSI... |
| Datasheet |
 SD11912 Datasheet 170.41KB |
