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SD11957 - SiC Half-Bridge Power Module

General Description

1 S1 2 G1 3 n/c 4 n/c 5 G2 6 S2 7 AC 8 N 9 P SD11957 SiC Half-Bridge Power Module - 1 VDS = 1200V RDSon = 13mΩ ID = 105A @ TC = 25°C

Key Features

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Datasheet Details

Part number SD11957
Manufacturer Solitron Devices
File Size 176.53 KB
Description SiC Half-Bridge Power Module
Datasheet download datasheet SD11957 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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9 [+] Q1 2 1 7 [~] Q2 5 6 8 [-] PIN CONNECTIONS PIN DESCRIPTION 1 S1 2 G1 3 n/c 4 n/c 5 G2 6 S2 7 AC 8 N 9 P SD11957 SiC Half-Bridge Power Module - 1 VDS = 1200V RDSon = 13mΩ ID = 105A @ TC = 25°C FEATURES & BENEFITS • SUPERIOR SYSTEM EFFICIENCY DUE TO LOW SWITCHING AND CONDUCTIONS LOSSES OF SIC • OUTSTANDING POWER CONVERSION EFFICIENCY AT HIGH FREQUENCY OPERATION • HIGH SPEED SWITCHING W/ LOW CAPACITANCE • REDUCED PARASITIC INDUCTANCE AND CAPACITANCE • REAL KELVIN SOURCE CONNECTION FOR STABLE GATE DRIVE • ISOLATED BACKSIDE FOR DIRECT MOUNT TO HEATSINK • ALN SUBSTRATE AND CUMO BASEPLATE FOR THERMAL CONDUCTIVITY • HIGH JUNCTION TEMPERATURE OPERATION • LOW JUNCTION TO CASE THERMAL RESISTANCE • REDUCED THERMAL REQUIREMENTS AND SYSTEM COST • RUGGED MOUNTING DUE TO INT