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SD11957 Solitron Devices SiC Half-Bridge Power Module

Solitron Devices
Description 1 S1 2 G1 3 n/c 4 n/c 5 G2 6 S2 7 AC 8 N 9 P SD11957 SiC Half-Bridge Power Module - 1 VDS = 1200V RDSon = 13mΩ ID = 105A @ TC = 25°C FEATURES & BENEFITS • SUPERIOR SYSTEM EFFICIENCY DUE TO LOW SWITCHING AND CONDUCTIONS LOSSES OF SIC • OUTSTANDING POWER CONVERSION EFFICIENCY AT HIGH FREQUENCY OPERATION • HIGH SPEED SWITCHING W/ LOW CAPACITANCE • REDUCED PARASITIC INDUCTANCE AND C...
Features & BENEFITS
• SUPERIOR SYSTEM EFFICIENCY DUE TO LOW SWITCHING AND CONDUCTIONS LOSSES OF SIC
• OUTSTANDING POWER CONVERSION EFFICIENCY AT HIGH FREQUENCY OPERATION
• HIGH SPEED SWITCHING W/ LOW CAPACITANCE
• REDUCED PARASITIC INDUCTANCE AND CAPACITANCE
• REAL KELVIN SOURCE CONNECTION FOR STABLE GATE DRIVE
• ISOLATED BACKSIDE FOR DIRECT MOUNT TO HEATSI...

Datasheet PDF File SD11957 Datasheet 176.53KB

SD11957   SD11957   SD11957  




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