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CXK77B3611AGB Datasheet High Speed Bi-CMOS Synchronous Static RAM

Manufacturer: Sony Semiconductor Solutions

Overview: CXK77B3611AGB -5/6 High Speed Bi-CMOS Synchronous Static RAM Preliminary For the availability of this product, please contact the sales office.

Download the CXK77B3611AGB datasheet PDF. This datasheet also includes the CXK77B3611AGB- variant, as both parts are published together in a single manufacturer document.

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General Description

The CXK77B3611AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 32768 words by 36 bits.

This SRAM integrates input registers, high speed SRAM and write buffer onto a single monolithic IC and

Key Features

  • the delayed write system to reduce the dead cycles. 119 pin BGA (Plastic) Features.
  • Fast cycle time (Cycle) (Frequency) CXK77B3611AGB-5 5ns 200MHz -6 6ns 167MHz.
  • Inputs and outputs are GTL/HSTL compatible.
  • Controlled Impedance Driver.
  • Single 3.3V power supply: 3.3V±0.15V.
  • Byte-write possible.
  • OE asynchronization.
  • JTAG test circuit.
  • Package 119TBGA.
  • 4 kinds of synchronous operation mode Register-Regi.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Sony Corporation Logo CXK77B3611AGB-5 High Speed Bi-CMOS Synchronous Static RAM Sony Corporation
Sony Corporation Logo CXK77B3611AGB-6 High Speed Bi-CMOS Synchronous Static RAM Sony Corporation

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