CXK77B1810AGB-6 ram equivalent, high speed bi-cmos synchronous static ram.
the delayed write system to reduce the dead cycles. Features
* Fast cycle time (Cycle) (Frequency) CXK77B1810AGB-5 5ns 200MHz -6 6ns 167MHz
* Inputs and outputs a.
The CXK77B1810AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 65536 words by 18 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a single monolithic IC and features the delayed write system .
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