* Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 package. S G ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit 30 + - 20 20 60 2
SSD2030N
South Sea Semiconductor
78.12 KB
N-channel mosfet.
SSD2030N N-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 30 @VGS = 10V 30V 20A 55 @VGS = 4.5V G S D TO-252 D FEAT.
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