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SSD2030P - P-Channel Enhancement Mode MOSFET

Key Features

  • Super high density cell design for low RDS(ON). Rugged and reliable. TO-252 package. Pb free. G S.

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Datasheet Details

Part number SSD2030P
Manufacturer South Sea Semiconductor
File Size 176.49 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSD2030P Datasheet

Full PDF Text Transcription for SSD2030P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SSD2030P. For precise diagrams, and layout, please refer to the original PDF.

P-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 40 @VGS = - 10V -30V -20A 65 @VGS = - 5V 75 @VGS = - 4.5V G S D SSD2030P TO-252 D FEATUR...

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0V -20A 65 @VGS = - 5V 75 @VGS = - 4.5V G S D SSD2030P TO-252 D FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. TO-252 package. Pb free. G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 125 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit -30 + - 25 -20 -50 -1.

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