* Super high density cell design for low RDS(ON). Rugged and reliable. TO-252 package. Pb free. G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 125 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit -30 +
SSD2030P Datasheet (176.49 KB)
SSD2030P
South Sea Semiconductor
176.49 KB
P-channel enhancement mode mosfet.
P-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 40 @VGS = - 10V -30V -20A 65 @VGS = - 5V 75 @VGS = - 4.5V G S D SSD.
📁 Related Datasheet
SSD2030N N-Channel MOSFET (South Sea Semiconductor)
SSD2007A Dual N-CHANNEL POWER MOSFET (Fairchild Semiconductor)
SSD2009A Dual N-CHANNEL POWER MOSFET (Fairchild Semiconductor)
SSD2011A Dual P-CHANNEL POWER MOSFET (Fairchild Semiconductor)
SSD2019A Dual P-Channel Power MOSFET (Fairchild Semiconductor)
SSD2025 Dual N-CHANNEL POWER MOSFET (Fairchild Semiconductor)
SSD20N03 N-Ch Enhancement Mode Power MOSFET (SeCoS)
SSD20N06 N-channel MOSFET (SeCoS)
SSD20N06-90D N-Channel MOSFET (SeCoS)
SSD20N06-C N-Ch Enhancement Mode Power MOSFET (SeCoS)
