* Super high density cell design for low RDS(ON). Rugged and reliable. TO-252 package. Pb free. G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit 30 + -
SSD5030N Datasheet (134.77 KB)
SSD5030N
South Sea Semiconductor
134.77 KB
N-channel mosfet.
SSD5030N N-Channel Enhancement Mode MOSFET Product Summary VDS (V) 30V TO-252 D ID (A) 50A RDS(ON) (mΩ) Max 9.5 @VGS = 10V 19.5 @VGS = 4.5V G S D .
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