ST4828N - Dual N Channel Enhancement Mode MOSFET

Description

The ST4828N is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Stanson

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Datasheet Details

Part number	ST4828N
Manufacturer	Stanson
File Size	941.43 KB
Description	Dual N Channel Enhancement Mode MOSFET
Datasheet	ST4828N Datasheet
Additional preview pages of the ST4828N datasheet.

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Free Datasheet http://www.datasheet4u.com/ N ST4828 ST4828N Dual N Channel Enhancement Mode MOSFET 10A DESCRIPTION The ST4828N is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer Li-ion Battery , power management and other battery powered circuits where high-side switching . PIN CONFIGURATION SOP-8 FEATURE � � � � � 60V/10A, RDS(ON) = 30mΩ (Typ.) @VGS = 10V 60V/6A, RDS(ON) =35mΩ @VGS = 4.

Published: Feb 1, 2014 |