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Stanson

ST4828N Datasheet Preview

ST4828N Datasheet

Dual N Channel Enhancement Mode MOSFET

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ST4828N
Dual N Channel Enhancement Mode MOSFET
10A
DESCRIPTION
The ST4828N is the Dual N-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application , notebook computer
Li-ion Battery , power management and other battery powered circuits where high-side
switching .
PIN CONFIGURATION
SOP-8
FEATURE
60V/10A, RDS(ON) = 30mΩ (Typ.)
@VGS = 10V
60V/6A, RDS(ON) =35mΩ
@VGS = 4.5V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and
maximum DC current capability
SOP-8 package design
PART MARKING
SOP-8
1
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
ST4828N 2008. V1




Stanson

ST4828N Datasheet Preview

ST4828N Datasheet

Dual N Channel Enhancement Mode MOSFET

No Preview Available !

Free Datasheet http://www.datasheet4u.com/
ST4828N
Dual N Channel Enhancement Mode MOSFET
10A
ABSOULTE MAXIMUM RATINGS (Ta = 25Unless otherwise noted )
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
Continuous Drain Current
(TJ=150)
TA=25
TA=70
Pulsed Drain Current
Continuous Source Current
(Diode Conduction)
Power Dissipation
TA=25
TA=70
Operation Junction Temperature
VGSS
ID
IDM
IS
PD
TJ
Storgae Temperature Range
Thermal Resistance-Junction to Ambient
TSTG
RθJA
Typical
60
±20
8.0
6.0
30
11
2.5
1.6
-55/150
-55/150
80
Unit
V
V
A
A
A
W
/W
2
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
ST4828N 2008. V1



Part Number ST4828N
Description Dual N Channel Enhancement Mode MOSFET
Maker Stanson
Total Page 7 Pages
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