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Dual N Channel Enhancement Mode MOSFET
The ST4828N is the Dual N-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application , notebook computer
Li-ion Battery , power management and other battery powered circuits where high-side
� 60V/10A, RDS(ON) = 30mΩ (Typ.)
@VGS = 10V
� 60V/6A, RDS(ON) =35mΩ
@VGS = 4.5V
� Super high density cell design for
extremely low RDS(ON)
� Exceptional on-resistance and
maximum DC current capability
� SOP-8 package design
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2007, Stanson Corp.
ST4828N 2008. V1