Stanson Datasheet | Specifications & PDF Download

PNP TRANSISTOR -0.5A 8550S Power Dissipation: 0.625W Collector Current: -0.5A Collector-Base Voltage: -45V TO-92 MAXIMUM RATINGS AND ELECTRICAL CHAR

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STN4402 N Channel Enhancement Mode MOSFET 12A DESCRIPTION STN4402 is the N-Channel logic enhancement mode power field effect transistor which is produ

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STN8205D Dual N Channel Enhancement Mode MOSFET 5.0A DESCRIPTION STN8205D is the dual N-Channel enhancement mode power field effect transistor which i

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ST3401M23RG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401M23RG is the P-Channel logic enhancement mode power field effect transistor wh

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STN210D N Channel Enhancement Mode MOSFET
DESCRIPTION 80.0A STN210D uses Trench MOSFET technology that is uniquely optimized to provide the most

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ST47P06D P Channel Enhancement Mode MOSFET -47.0A DESCRIPTION ST47P06D is the P-Channel logic enhancement mode power field effect transistor which i

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ST2341SRG P Channel Enhancement Mode MOSFET -3.2A DESCRIPTION ST2341SRG is the P-Channel logic enhancement mode power field effect transistor which

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ST2303SRG P Channel Enhancement Mode MOSFET -2.6A DESCRIPTION ST2303SRG is the P-Channel logic enhancement mode power field effect transistor which

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www.DataSheet4U.com P Channel Enchancement Mode MOSFET -3.5A DESCRIPTION ST3403 The ST3403 is the P-Channel logic enhancement mode power field effe

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www.DataSheet4U.com PNP TRANSISTOR -100mA A733 AF OUTPUT AMPLIFIER MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS¡] Ta=25¢J¡^ PARAMETERS SYMBOL

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NPN TRANSISTOR www.DataSheet4U.com 100mA C945 AF OUTPUT AMPLIFIER MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS¡] Ta=25¢J¡^ CONDITION Ic=1mA Ic=5

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ST6206 Low ESR Low Drop Out Voltage Regulators DESCRIPTION ST6206 family is a positive voltage linear regulators, low power consumption, high votage m

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Single-line ESD Protection Array Working voltage 5V DESCRIPTION STE0511 The STE0511 are designed by TVS device that is to protect sensitive electron

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Dual-Line ESD Protection Array Working voltage 5V DESCRIPTION STE0512 The STE0512 are designed by TVS device that is to protect sensitive electronic

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Four-Line ESD Protection Array Working voltage 5V DESCRIPTION STE0514 The STE0514 are designed by TVS device that is to protect sensitive electronic

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Five-Line ESD Protection Array Working voltage 5V DESCRIPTION STE0515 The STE0515 are designed by TVS device that is to protect sensitive electronic

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STN4438 N Channel Enhancement Mode MOSFET 8.2A DESCRIPTION STN4438 is the N-Channel logic enhancement mode power field effect transistor which is prod

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STP2301 P Channel Enhancement Mode MOSFET -2.8A DESCRIPTION The STP2301 is the P-Channel logic enhancement mode power field effect transistor is pro

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STN8882D N Channel Enhancement Mode MOSFET 60.0A DESCRIPTION STN8882D is the N-Channel logic enhancement mode power field effect transistor which is p

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STP3052D P Channel Enhancement Mode MOSFET -25.0A DESCRIPTION STP3052D is the P-Channel logic enhancement mode power field effect transistor which i

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