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ST2305 - P Channel Enchancement Mode MOSFET

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Description

The ST2305 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number ST2305
Manufacturer Stanson Technology
File Size 131.53 KB
Description P Channel Enchancement Mode MOSFET
Datasheet download datasheet ST2305 Datasheet
Additional preview pages of the ST2305 datasheet.

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www.DataSheet4U.com P Channel Enchancement Mode MOSFET -3.5A DESCRIPTION ST2305 The ST2305 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outine surface mount package. PIN CONFIGURATION SOT-23-3L 3 FEATURE z -10V/-3.5A, RDS(ON) = 50m-ohm @VGS = -4.5V z -10V/-3.0A, RDS(ON) = 70m-ohm @VGS = -2.5V z -10V/-2.0A, RDS(ON)= 105m-ohm @VGS=-1.
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